Abstract
New high mobility channel materials such as SiGe, Ge, and InGaAs create difficult thermal constraints on Metal-Nitride deposition, where limits range from 300-400C. It is necessary to: limit atomic diffusion; prevent undesirable phase transitions, strain relaxation and defect formation. Feasibility for low temperature hydrazine (H2NNH2) ALD was reported by George.3 In addition, a new technology that is capable of generating and delivering stable and highly concentrated anhydrous hydrazine gas has been developed by RASIRC. A thin layer of silicon nitride or silicon oxynitride can act as a diffusion barrier or channel passivation layer prior to dielectric deposition in FinFets or MOSFETs. When employed as a channel passivation layer, further oxidation with anhydrous peroxide leaves Si-N-OH termination, thereby providing good nucleation for High K deposition (Figure 1). This study focuses on developing <400C silicon nitride ALD process. STM/STS and XPS are employed to characterize SiNx film growth on Si0.5Ge0.5(110) (Figure 2). HfO2 is then grown on a Si-N-OH functionalized surface. Electrical characterization of MOSCAP structures has been obtained will be compared to other passivation methods such as ammonia plasma. Figure 1
Published Version
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