Silicon Oxide-Based Memory and Three-Dimensional Nanoporous System for Ultrahigh Density Storage

Abstract

Two-terminal oxide-based resistive random access memories (RRAM) are garnering enormous interest for the development of next generation nonvolatile memory beyond current Si-based memory technology. We have previously demonstrated a unipolar nonvolatile memory with silicon oxide (SiOx) for the first time . SiOx is among the most common and low-cost material in the semiconductor industry, which can be formed by various ways. These SiOx memory elements have shown desirable performance metrics such as excellent switching behavior by conducting nanofilaments forming at a sub-5-nm scale. We fabricated highly transparent memory and 1-kilobit one diode-one resistor crossbar devices using SiOx material, which show low energy consumption (~10^-3 J/Gbit), multi-bits ability, and high ON-OFF ratio (up to 10^7) without a compliance current. Furthermore, we recently developed an industry-applicable fabrication approach to new resistive random access memory platform employing a nanoporous SiOx material. This exhibits reversible memory states, which outperform the switching ability of any other unipolar memory. As the major topic, I will focus on the switching properties and the mechanism of SiOx memory and its nanoporous device platform, and present the recent approach for ultra-high density of memory array.