Abstract
Resistive random access memories (ReRAM) has attracted tremendous attention as a promising candidate for non-volatile memory. ReRAM can be classified into two categories: unipolar and bipolar memory. The advantage of unipolar memory is that it can be integrated into simple 1D-1R architecture with low static power consumption and constrained sneak-path issue. This is because unipolar memory does not require opposite voltage polarities for on/off switching [1]. SiO x has long been used as gate dielectrics for MOSFET and recently proved to be an active unipolar ReRAM material [2, 3]. Here we report SiO x -based 1D-1R high density nanopillar ReRAM via nanosphere lithography.
Published Version
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