Abstract

Ever since the earliest research on optical circuits, dating back to the 1970s, there have been visions of an optical superchip (see for example 1,2 ) , containing a variety of integrated optical components to carry out light generation, modulation, manipulation, detection, and amplification (Fig. 1. The early work was associated with ferroelectric materials such as lithium niobate (LiNbO 3 ), and III-V semiconductors such as gallium arsenide (GaAs) and indium phosphide (InP) based systems. LiNbO 3 was interesting almost solely because of the fact that it possesses a large electro-optic coefficient 3 , enabling optical modulation via the Pockels effect. Alternatively, the III-V compounds were interesting because of the relative ease of laser fabrication and the prospect of optical and electronic integration.

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