Abstract
Heterogeneous integration of materials pave a new way for the development of the microsystem with miniaturization and complex functionalities. Two types of hybrid silicon on insulator (SOI) structures, i.e., Si (100)-on-Si (111) and Si (111)-on-Si (100), were prepared by the smart-cut technique, which is consist of ion-slicing and wafer bonding. The precise calculation of the lattice strain of the transferred films without the epitaxial matching relationship to the substrate was demonstrated based on X-ray diffraction (XRD) measurements. The XRD and Raman measurement results suggest that the transferred films possess single crystalline quality. With a chemical mechanical polishing (CMP) process, the surface roughness of the transferred thin films can be reduced from 5.57 nm to 0.30 nm. The 4-inch GaN thin film epitaxially grown on the as-prepared hybrid SOI of Si (111)-on-Si (100) by metalorganic chemical vapor deposition (MOCVD) is of improved quality with a full width at half maximum (FWHM) of 672.54 arcsec extracted from the XRD rocking curve and small surface roughness of 0.40 nm. The wafer-scale GaN on Si (111)-on-Si (100) can serve as a potential platform for the one chip integration of GaN-based high electron mobility transistors (HEMT) or photonics with the Si (100)-based complementary metal oxide semiconductor (CMOS).
Highlights
The technology node of semiconductor technology process has been reduced to 5 nm, and the Moore’s law is approaching the physical limit.[1]
The full width at half maximum (FWHM) for the as-transferred Si (100) film after annealing at 550 ◦C is about 83.84 arcsec in comparison to the 19.08 arcsec of the virgin wafer
This is in agreement with the results reported in Ref. 36, in which the FWHM of silicon on insulator (SOI) is 80 arcsec while the Si substrate possess a FWHM of 9 arcsec
Summary
The technology node of semiconductor technology process has been reduced to 5 nm, and the Moore’s law is approaching the physical limit.[1]. The obtained thin film material has a good single crystalline quality since it is cut from a single crystalline wafer. This process has been successfully applied in the commercialization of SOI wafer production.[17] The ordinary SOI, which is normally in the configuration of Si (100)/SiO2/Si (100) with the same Si orientation, has been widely used.[18] With the advent of the internet of things and the era of 5G, hybrid SOI composed of different Si orientations are attracting more and more attention in recent years.[19,20] Hybrid SOI can serve as the platforms for heterogeneous epitaxial growth
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