Abstract
Submicron nonvolatile memory transistors were fabricated by exposing silicon-on-insulator (SOI) buried oxides to hydrogen at elevated temperatures to generate mobile protons in the buried oxides. By switching the polarity of the bias to the SOI substrate, the mobile protons in the buried oxide were transported to either the top or bottom Si–buried oxide interface, switching the leakage current of top gate transistors from an ON to an OFF state.
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