Abstract
A silicon-on-insulator CMOS low-noise amplifier has been designed, fabricated using the 0.18-μm topology, and tested. The following key characteristics of this amplifier have been determined: parameter S21 is no lower than 11 dB in the frequency range from 500 MHz to 1.5 GHz, and the noise factor is no higher than 4 dB at 2 GHz.
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