Abstract
In recent years, silicon nitride (SiN) has drawn attention for the realisation of integrated photonic devices due to its fabrication flexibility and advantageous intrinsic properties that can be tailored to fulfill the requirements of different linear and non-linear photonic applications. This paper focuses on our progress in the demonstration of enhanced functionalities in the near infrared wavelength regime with our low temperature (<;350 °C) SiN platform. It discusses (de)multiplexing devices, nonlinear all optical conversion, photonic crystal structures, the integration with novel phase change materials, and introduces applications in the 2 μm wavelength range.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
