Abstract
We report the elaboration of SiNx-passivated chemically assembled single-electron transistors (SETs) by bottom-up processes involving electroless Au plating and the chemisorption of Au nanoparticles. With a Au top-gate electrode, the SiNx-passivated SETs showed a clear Coulomb diamond at 9 K and the top-gate capacitance was 17 times larger than the side-gate capacitance. Moreover, Coulomb oscillation and the Coulomb diamond were observed even at 160 K. Thus, planar technology is applicable to chemically assembled SETs.
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