Abstract
In this letter, amorphous silicon nitride (Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> ) film grown by inductively coupled plasma chemical vapor deposition (ICPCVD) method is used as the photosensitive layer of deep ultraviolet (DUV) detection, whose thickness and roughness are 200 nm and 0.92 nm, respectively. The transverse symmetrical photoconductive detector with interdigital electrodes spacing of 4 μm is fabricated by photolithography, exhibiting ultrahigh photo-to-dark current ratio (PDCR) more than 105, fast fall speed of 127 ms and also a satisfying responsivity of 1.09 mA/W. This work lays a foundation for further researches on Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> in photonics and electronics.
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