Silicon nanoribbons based printed transistors for high-performance flexible electronics

Abstract

In this work, we present a room-temperature (RT) processable p-type Si nanoribbons-based field effect transistor (NRFETs) as building blocks for high performance flexible electronics. The nanoribbons (NR) fabrication process was optimized for selective p-type doping for source/drain and then they were transfer printed on flexible substrate. Following this the high quality silicon nitride (SiNx) dielectric was deposited at RT through inductively coupled plasma chemical vapour deposition ICP-CVD method. The transfer and output characteristics of p-type NRFET are presented along with device stability evaluation for a total of 100 bending cycles. The extracted mobility (~85 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> s <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> ) and current on/off ratio (>10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> ) show excellent potential for using transfer printed p-type Si NRs as building blocks for high performance flexible CMOS circuits.