Abstract
Abstract New method of silicon nanoclusters growth was proposed. Silicon nanoclusters are formed in silicon dioxide under high power density electron beam irradiation. The irradiated region of SiO 2 is overheating due to low heatconductivity. The temperature of overheating is depended on electron current density. It was estimated by Monte-Carlo method. This work was devoted to study of nanoclusters formation at different electron beam power density.
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