Investigation of Point Defects Modification in Silicon Dioxide by Cathodoluminescence

Abstract

The aim of this work is study of point defects modification in silicon dioxide by a high power density electron beam. In this work we used the method which allows to estimate quantitative content of luminescent point defects by dependence of cathodoluminescence on current density. Content of point defects was evaluated and changing of point defect content in silicon dioxide under electron beam was assessed. It is shown that content of defect connected with silicon deficit decreases whereas content of defect connected with oxygen deficit increases. The model of point defects transformation was suggested on the basis of these results.