Abstract
We report on a scanning tunneling microscopy study of mass transport and the resulting morphological changes during Sb deposition on Si(111). Formation of silicon islands is found to take place during the initial stages of Sb deposition, while additional Sb causes the formation of pits. Both observations are explained in terms of the changes in Si surface density caused by the various Sb-induced reconstructions. The islands preferentially nucleate away from step edges, leaving a denuded zone. Measuring the denuded zone width shows a decrease in the diffusion length of Si with increasing Sb coverage.
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