Silicon Meets Graphene for a New Family of Near-Infrared Schottky Photodetectors

Maurizio Casalino

doi:10.3390/app9183677

Abstract

In recent years, graphene has attracted much interest due to its unique properties of flexibility, strong light-matter interaction, high carrier mobility and broadband absorption. In addition, graphene can be deposited on many substrates including silicon with which is able to form Schottky junctions, opening the path to the realization of near-infrared photodetectors based on the internal photoemission effect where graphene plays the role of the metal. In this work, we review the very recent progress of the near-infrared photodetectors based on Schottky junctions involving graphene. This new family of device promises to overcome the limitations of the Schottky photodetectors based on metals showing the potentialities to compare favorably with germanium photodetectors currently employed in silicon photonics.

Highlights

Thanks to the reflections multiple reflections in the theabsorption graphene increases up to leading to a maximum responsivity increasing with the reverse voltage absorption increases up to 8% leading to a maximum responsivity increasing with the reverseapplied voltage and reaching a maximum of
In thisat work overview of near-infrared Si PDs based on internal photoemission effect (IPE) occurring in graphene, has been
In this work an overview of near-infrared Si PDs based on IPE occurring in graphene, has been presented

Summary

Introduction

The field of silicon photonics (Si PDs) is nowadays an emerging market promising to reach a. Both switching and interconnects of interconnects of the existing data center will no longer support the huge increase in internet data the existing data center will no longer support the huge increase in internet data traffic driven by the traffic driven by the social network and video contents.

Silicon photonics

Theoretical Background

IPE-Based

Design of Resonant

Findings

Conclusions