Abstract
AbstractWe investigated correlation between concentration of deep level defects at dislocations, detected by deep level transient spectroscopy (DLTS) and the efficiency of dislocation related luminescence in Si samples with dislocation density of about (3–5) × 108 cm–2. We show that significant reduction of concentration of deep states at dislocations achieved by using the combination of gettering and passivation, results in a drastic (by several orders of magnitude) increase of dislocation‐related D1 luminescence in a high temperature range. As a consequence, electroluminescence (EL) from dislocation related D1‐line reaches an external efficiency more then 0.1% at room temperature. Concentration of D1 and D2 luminescence centers, roughly estimated from the optical absorption spectrum, was found to be of the order of 3 × 1014 cm–3 for dislocation density of about 5 × 108 cm–2. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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