Abstract
Silicon-ion implantation in semi-insulating Fe-doped InP has been investigated. Chemical vapor deposited (CVD) SiO2 encapsulation film for annealing of the Si-implanted layer has been investigated by Auger electron analysis. It indicated that by selecting deposition condition, CVD SiO2 films can be used effectively as an annealing encapsulant of InP. The electrical activation of 80% was realized at 750 °C annealing for doses ranging from 6×1012 to 3×1014 cm−2 at 350 keV. Depth profiles after annealing were found to be close to the Lindhard-Scharff-Schiott (LSS) theory, with no redistribution of implanted Si by the annealing process. Anomalous behavior in activation efficiency was found at relatively low doses of the order of 1012 cm−2, and it is considered to be due to compensation by Fe in the substrate.
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