Abstract
Hall effect measurements and low temperature photoluminescence properties of silicon implanted with doses between 1×10 13 and 5×10 14 cm -2, and capless annealed (at 750 °C for 15 min) semi-insulating InP: Fe samples are presented. A monotonic decrease in the measured electrical activity is observed with increasing Si + implanted dose. From photoluminescence analysis (77 and 6.5 K) the above result is tentatively interpreted by a dose-dependent increase of the concentration of shallow (Zn) and deep (Mn) acceptors in the implanted region. This is confirmed by SIMS measurements which reveal, for the first time, that the residual Zn atoms exhibit a tendency to getter towards the surface due to high dose implants.
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