Abstract

An integrated complementary MOS transistor scale-of-two counter for applications in electronic wrist watches has been realized. Silicon-gate technology applied to a very simple but safe dividing circuit has resulted in a substantial reduction of the total area of the integrated structure with the following performance. At a supply voltage of 1.35 V the maximum frequency is 2 MHz and the dynamic power consumption per stage is 1.6 nW/kHz. The complementary substrate is obtained by a sealed-capsule low-surface concentration diffusion and doped oxides as impurity sources are used to allow simultaneous diffusion of both types of MOS transistors. A simple dynamic circuit derived from the basic structure is described.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.