Silicon Field Emitter Arrays With Current Densities Exceeding 100 A/cm<sup>2</sup> at Gate Voltages Below 75 V

Abstract

We report silicon field emitter arrays (FEAs) that demonstrate current densities >100 A/cm2 at gate–emitter voltages $\approx 350$ nm) that are self-aligned to the field emitter tip enabling device operation at >100 A/cm2 with gate-to-emitter voltages that are less than 75 V. These FEAs demonstrate performance that has the potential to enable smaller, more efficient, and high-power vacuum electronics.