Abstract
We propose use of silicon field emission array as a novel charge neutralization device for ion implanter. Fundamental characteristics of the emitted electrons, i.e. energy distribution and operation in high vacuum were investigated. As a result, energy spread was narrow enough but unexpected energy peak shift was observed. To reduce the energy spread and peak shift, a FEA with less number of tips and with narrower gate diameter is necessary. The FEA could be operated about 100h in high vacuum.
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