Abstract

We have proposed a novel CND: a gated silicon field emission array (Si-FEA) (Ikejiri, 2003). Si-FEA can be an ideal electron source for CND, because the energy distribution expected to be narrow enough to satisfy the above requirements. Furthermore, Si-FEA may eliminate the use of metal. However, the surface of silicon emitter tends to be oxidized when residual gas of a vacuum chamber includes O/sub 2/ gas. While, carbonized silicon emitter is expected to have oxidation resistance, and it doesn't include metal. So in this study, electron emission characteristics of Si-FEA and carbonized Si-FEA (Si:C-FEA) were investigated.

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