Silicon etching in CCl/sub 2/F/sub 2//O/sub 2/ plasma

Abstract

In technology of microelectronics for want of shaping of elements of IC the essential place takes plasma etching. The processes which are flowing past in reactors, are represented by the complicated, multifactor phenomena. These processes include mechanisms of interaction of particles in volume of HF plasma, on the boundary plasma sample, on the boundary the plasma constructional elements of the reactor. The analysis of literary datas shows, that the most approaching constructional material for the plasma reactor is the fluorine polymer. In the present work the research of process of plasma etching of silicon in plasma CCl/sub 2/F/sub 2//O/sub 2/ on equipment Plasma - 600_ is conducted. Parameters of process: limiting vacuum 6-8 units, stream CCl/sub 2/F/sub 2/ - 30 units, stream O/sub 2/-20 units, current of the anode 0.6 A, grid current 69 mA, orientation of silicon [111], velocity of etching of silicon 0.21 micron/min, constructional material for the plasma reactor is the fluorine polymer. The experiments have shown, that the cover of walls of the quartz reactor results in magnification of a velocity of etching of silicon in 3 times. It is revealed by us for the first time.