Abstract
Summary form only given. The analysis of prospects of development nanoelectronics and silicon nanotechnology is carried out. The information on a condition of works on manufacturing integrated microcircuits on technological norms 32, 45, 51, 55 and 60 nm is resulted. The basic results of plasma etching of silicon in CCl2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The model of plasma chemical of etching of silicon in plasma CCl2F2/O2 in conditions of active delivery CAP is constructed at the expense of etching of teflon polymer.
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