Silicon epitaxial growth by rapid thermal processing chemical vapor deposition

Abstract

High quality thin silicon epitaxial films have been grown on heavily doped p+ substrates using rapid thermal processing chemical vapor deposition with superior thickness and dopant profile control. The epitaxial growth kinetics have been studied by examining the dependence of growth rate on the deposition temperature, the volume percentage of SiH2Cl2, and the total gas flow rate. Submicron epitaxial layers with hyperabrupt dopant transition (<200 Å/decade) and excellent crystalline perfection with low defect density have been obtained.