Abstract
By means of increasing the doping level of thermodiode base the silicon p 2+n +-type temperature sensors have been attained whose response curves do not exhibit the kinks in the cryogenic temperature range. The effect is connected with the suppression of freezing out of carriers to impurities in the diode base. It results in lowering of base resistance below junction one. Mechanisms responsible for the response curve form under this conditions are discussed. With this aim the sensors' current–voltage characteristics in wide ranges of temperatures and currents are measured and analysed.
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