Abstract
It is shown that nearly ideal current-voltage characteristics (I-V curves) can be obtained for small-area, shallow silicon diffused p-n junctions irradiated with 60Co gamma rays in the dose range 103–5×105 Gy. In the irradiated diodes the current transfer mechanism is observed to shift from generation-recombination to diffusion. The nonideality factor on the forward branch of the I-V curve decreases from 1.68 in the unirradiated diode to 1.17 in a diode irradiated to a dose of 5×105 Gy. A saturation current is observed on the reverse branch of the I-V curves of irradiated diodes at room temperature.
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