Abstract
Deposition of silicon from silane discharges is studied in diode and hollow‐cathode systems. Using the single‐target (‘‘diode’’) configuration as a reference, it is shown that discharge confinement results in substantial increases in deposition rate and efficiency. The ‘‘target‐confined hollow cathode’’ exhibits the best performance; in comparison with a diode discharge at 2‐Pa silane pressure, rates are 20–50× higher at fixed applied rf voltage and 5× higher at fixed input power density. Alternatively, for a fixed deposition rate this new configuration allows the applied rf voltage to be reduced by ∼10 and the power density to be reduced by ∼20, again at a 2‐Pa pressure. Planarizing films are obtained at low pressures and/or low gas flows, while high pressures yield more directional deposition over surface steps. Good agreement with this profile study, and with our deposition rate data, is given by a model wherein ion bombardment is the dominant film forming and etching mechanism at low pressures, and wherein trapping of both excited neutrals and of electrons may contribute to the high efficiencies and rates observed.
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