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Abstract
Abstract A comparative study of silicon damage and overlayer formation with CHF 3 reactive ion etching and reactive ion beam etching is performed. Fluorine XPS F1s spectra reveal a contribution characteristic of the first residue layers. The effect of the ion bombardment, concerning the amorphization of the subsurface is established with precision. Bombardment by energetic ions ( > 100 eV ) is necessary to induce the formation of a silicon carbide at the interface, but this condition is not sufficient; the neutral flux density could be a critical parameter. The results suggest a schematic diagram representing the region probed by XPS.
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