Silicon carbide split-trench-source VDMOSFET with integrated Schottky barrier diode and reduced cell pitch

Abstract

A new silicon carbide (SiC) VDMOSFET with an integrated split trench Schottky barrier diode (SBD) between split sources is proposed, namely STS-VDMOSFET, and investigated by 2D simulation. Compared with the SiC VDMOSFET integrated with SBD between split sources (SS-VDMOSFET), the cell pitch of the proposed structure can be greatly reduced apart from suppressing the conduction of the intrinsic body diode. Consequently, the active area of the proposed structure is 23% lower than that of the SS-VDMOSFET with the same on-state resistance, leading to reducing the cost effectively and the switching loss lightly. In addition, the trench-source can be etched during alignment mask without lithographic process of P+ implantation. In a word, the proposed structure is a superior choice for the SBD integration scheme solution because of the simplified process, excellent performance of device and the reduced cost.