Abstract
As a wide-bandgap semiconductor material, silicon carbide (SiC) is beginning to be widely used in high voltage power devices because of its superior electrical properties. Among SiC-based power devices, the SiC MOSFET is a popularly studied device due to its low drive power consumption, fast switching speed and low conduction loss. However, as for the conventional MOSFET, the high on-state voltage drop and bipolar degradation effect of the body PN junction diode result in a poor reverse recovery performance. And SiC MOSFETs with integrated Schottky barrier diodes have obvious advantages over the conventional SiC MOSFETs, which do not require off-chip anti-parallel fast recovery diodes in applications. In this paper, a new SiC trench MOSFET is proposed, which a Schottky barrier diode is integrated to enhance the reverse recovery performance.
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