Abstract
With the development of new materials and new energy industries, power devices have also made great progress. Compared with traditional silicon-based power electronic devices, wide-band gap semiconductor devices based on silicon carbide which are considered to be an important alternative to silicon-based devices, have excellent properties such as high breakdown voltage, thermal conductivity, and electron saturation drift and radiation resistance. At the same time, power electronic devices are widely used in high-speed railway. The application of a new type of silicon carbide power device in electrical traction is discussed. The experiment of system characteristics shows that the power device made of silicon carbide can effectively reduce the power loss of the system, adapt to the bad working conditions, and make the equipment lightweight.
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