Abstract
Silicon carbide (SiC) films were synthesized on graphite substrates using silicon nitride (Si3N4) as silicon source at 1850°C, 1950°C, 2050°C and 2150°C, respectively. The characteristics of the synthesized films were analyzed by X-ray diffraction and scanning electron microscopy. The results show that the synthesis reaction can take place above 1850°C, and the SiC films were β-SiC. With the increase of temperature, the size of SiC particles increases, and when the soaking time is too short, the SiC particles are connected in a large area. Through the analysis of the films synthesis process, it is inferred that the growth of the SiC films belongs to the gas-solid growth mechanism.
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