Abstract
Silicon carbide (SiC) films were prepared by simultaneous irradiation of energetic, isotopical mass-separated 28 Si - and 12 C + ions. Kinetic energies of both ions were 200 eV and deposition temperatures were room temperature, 400 and 600°C. Investigations of the basic film properties such as film composition, impurity, structures, etc. have been undertaken using infrared absorption (IR) spectroscopy, X-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED) measurements. Growth temperatures of SiC polycrystalline films under irradiation of ions for film deposition were investigated through the above measurements.
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