Abstract
Initial growth temperature of SiC polycrystalline films by simultaneous irradiation of energetic, isotopical mass-separated Si−28 and C+12 ions was investigated. The kinetic energies of both ions were 200 eV and deposition temperatures were room temperature, 400 °C, and 600 °C. The SiC films deposited at ∼600 °C showed the infrared absorption peak at 802 cm−1 and weak ring patterns on reflection high-energy electron diffraction measurements, characteristics for crystalline SiC. With x-ray photoelectron spectroscopy, transmission electron microscopy, and transmission electron diffraction, the films were nearly stoichiometric and the initial growth of nanocrystalline 3C–SiC at ∼600 °C under ion irradiation was observed.
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