Abstract
Silicon carbide (SiC) is a wide bandgap semiconductor that is highly suited for operation in extreme environments, including high temperatures and high levels of radiation. Electronic-grade wafers of SiC first became commercially available in the early 1990's, and since that time SiC electronic device technology has progressed rapidly. This work reviews the current status of electronic device technology in SiC and assess the prospects for applying this technology to operation in extreme environments.
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