Silicon carbide doped Sb2Te3 nanomaterial for fast-speed phase change memory

Abstract

In this study, doping of Sb2Te3 with silicon carbide has been proposed to enhance the optical and electrical properties of Sb2Te3. The silicon carbide-doped Sb2Te3 (Sb2Te3-SiC)-based phase change memory cell can be triggered by a 10ns electric pulse, indicating its excellent electrical properties. Furthermore, femtosecond pulses are used to study the reversible phase transition processes. The large reflectivity ratio of Sb2Te3-SiC is beneficial for achieving distinguishable logical states in optical applications. X-ray diffraction and transmission electron microscopy results show the SiC doping plays an important role in refining the grain size of Sb2Te3, producing smaller grain.