Abstract
Phase transform properties of Indium Selenide (In2Se3) based Random Access Memory (RAM) have been explored in this paper. Phase change random access memory (PCRAM) is an attractive solid-state nonvolatile memory that possesses potential to meet various current technology demands of memory design. Already reported PCRAM models are mainly based upon Germanium-Antimony-Tellurium (Ge2Sb2Te5 or GST) materials as their prime constituents. However, PCRAM using GST material lacks some important memory attributes required for memory elements such as larger resistance margin between the highly resistive amorphous and highly conductive crystalline states in phase change materials. This paper investigates various electrical and compositional properties of the Indium Selenide (In2Se3) material and also draws comparison with its counterpart mainly focusing on phase transform properties. To achieve this goal, a SPICE model of In2Se3 based PCRAM model has been reported in this work. The reported model has been also validated to act as a memory cell by associating it with a read/write circuit proposed in this work. Simulation results demonstrate impressive retentivity and low power consumption by requiring a set pulse of 208 μA for a duration of 100 μs to set the PCRAM in crystalline state. Similarly, a reset pulse of 11.7 μA for a duration of 20 ns can set the PCRAM in amorphous state. Modeling of In2Se3 based PCRAM has been done in Verilog-A and simulation results have been extensively verified using SPICE simulator.
Highlights
With the rapid expansion of modern technologies, researchers have been motivated towards nonvolatile memory elements [1]
Various characteristics obtained using MATLAB have been plotted for the Phase change random access memory (PCRAM) model presented in this paper
This paper presents an effective design of a read/write driver for the reported PCRAM model
Summary
With the rapid expansion of modern technologies, researchers have been motivated towards nonvolatile memory elements [1]. Over the past few years, flash memories have been struggling to meet the technology trends exhibiting unpleasant effects of scaling lateral device dimensions, stress-induced leakage current (SILC), and the cell-to-cell parasitic interference between the stored charges in closely packed cells. These effects are mainly observed due to programming with large voltages across ultrathin oxides. This work addresses challenges for the phase change technology for In2Se3 based PCRAM which include the design of PCM cells for low set/reset current, requirement to control deviceto-device variability, and undesirable changes in the phase change material that can be induced during the fabrication processes.
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