Silicon carbide contamination of epitaxial silicon grown by pyrolysis of tetramethyl silane

Abstract

Thin films of silicon have been deposited epitaxially by chemical vapor deposition using tetramethyl silane, Si(CH 3) 4, (TMS) as the transporting agent. Silicon carbide has been found in varying amounts as a contaminating agent depending upon temperature of deposition and presence of hydrogen during the etching or reaction. Experiments below 1100°C formed amorphous silicon films containing large amounts of SiC as revealed by the wide infrared absorption band around 790 cm -1 characteristic of cubic SiC.