Silicon Carbide Composites Deposited in Silicon Carbide Whiskers by CVI Process

Abstract

Chemical vapor deposition (CVD) is an effective method of preparing silicon carbide whiskers or films and chemical vapor infiltration (CVI) can be successfully used as the preparation of SiC composites. In this paper, silicon carbides whiskers were firstly deposited on substrates of RB-SiC by CVD process and then silicon carbide composites were prepared by chemical vapor infiltration in the SiC whiskers in an upright chemical vapor deposition furnace of Φ150mm×450mm with methyltrichloride silicane (MTS) as precursor gas, H2 as carrier gas and Ar as dilute gas. The morphologies of the SiC whiskers grown on RB-SiC substrate and SiC composites infiltrated in SiC whiskers were determined by scanning electron microscope (SEM), and the crystalline phase of the final deposits were confirmed with X-ray diffractometry (XRD) As a result, the curly defects of whiskers decrease with the addition of dilute gas. And by chemical vapor infiltration in SiC whiskers the, SiC composites were successfully prepared. Finally the deposits were determined as β-SiC.