Silicon carbide and SiC-AIN solid-solution p-n structures grown by liquid-phase epitaxy

Abstract

We will review the principles, history, state-of-the-art and perspectives of liquid-phase epitaxy (LPE) of SiC p-n structures. SiC growth from a Si melt as well as from alternative melts will be described together with p-n junction characteristics. The LPE technique controls the doping concentration in SiC from 10 15 to 10 20 cm -3. High-quality 6H-SiC and 4H-SiC multilayer structures and p-n junctions have been grown by LPE. SiC p-n junction growth from the liquid phase requires temperatures as low as 1100°C. New directions of SiC LPE will be discussed: (1) heteropolytype growth and (2) growth of the SiC-based solid solution.