Abstract
The aim of this paper is to make an introduction, review and preliminary investigation tasks of the application of Silicon Carbide (SiC) power semiconductors and magnetoresistive (MR) current sensors for Solid State Power Controllers (SSPCs) and controlled switches, especially for high temperature environment and/or high voltage applications.
Highlights
Wide BandGap (WBG) power semiconductors are nowadays being developed for many power conversion applications
During the last European Space Power Conference (ESPC 2014), a complete session was dedicated to WBG devices and applications, including a comprehensive paper of potential applications for the space sector [1]
Interesting reference [5] corresponds to a patent filled in may 2010. It describes power distribution system using bidirectional Solid State Power Controllers (SSPCs) based on two anti-series Silicon Carbide (SiC) JFET and anti-parallel diodes
Summary
Wide BandGap (WBG) power semiconductors are nowadays being developed for many power conversion applications. Silicon Carbide (SiC) very attractive for high-voltage, high-power and high temperature conditions where traditional silicon semiconductors find serious limitations. Shunt current sensing is probably the most used technique nowadays. The most obvious, it is an invasive method that consumes power and requires certain level of redundancy to avoid open-circuit failure of sensing resistor, and, in high voltage applications, requires high voltage transistors (current mirror and output current source) to stand with operating voltages and achieve high CMRR. MR technology is widely spread in several space sensor applications (position, magnetometers...) and current sensing has been investigated recently [2]
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