Abstract

This paper explores the possibility of a semiconductor-based over-current bypass circuit for high current solid-state power controllers (SSPCs). Therefore, two different topologies of the bidirectional DC SSPCs: a. without over-current bypass circuit b. with an over-current bypass circuit are presented for the same power ratings. The first SSPC consists of a parallel matrix connection of the discrete MOSFET devices (conducts during nominal and over-current conditions) and the second one is designed with fewer MOSFET loops (conducts during nominal condition) and additional IGBT modules matrices to bypass the over-current. The thermal performances of both the SSPCs are evaluated analytically and compared during the nominal and over-current situations. Later, the PLECS simulation models of the SSPCs are developed and the junction temperature of the devices are estimated. The overall weight, power density, and cost of these two SSPCs are approximated for the comparison. It is found that the SSPC topology with bypass circuit exhibits better power density and lower cost. Therefore, it can be employed to replace the tradition circuit breakers for the more electric aircraft (MEA) in the near future.

Highlights

  • The sources, power conversion mechanisms, and loads of the conventional aircraft are gradually replaced with the electrical counterparts in more electric aircraft (MEA)

  • The single input/single output solid-state power controllers (SSPCs) is designed with multiple internal channels using discrete metal-oxide semiconductor field-effect transistors (MOSFETs) (CREEC2M0025120D- TO247 package) and if necessary overcurrent bypass channels are built employing insulated-gate bipolar transistor (IGBT) modules (Infineon-FZ900R12KP4)

  • This paper presented the comparative evaluation of 24 channel SSPC based on MOSFETs with 12 channel MOSFET based SSPC with two bypass IGBT loops

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Summary

INTRODUCTION

The sources, power conversion mechanisms, and loads of the conventional aircraft are gradually replaced with the electrical counterparts in more electric aircraft (MEA). Semiconductorbased solid-state power controllers (SSPC) and hybrid circuit breakers (HCBs) are considered as the replacement for the ECBs. The SSPCs is purely developed with semiconductor devices posing higher conduction loss. The recent advancements and challenges for the design of the SSPC/HCB are presented in [5]–[10]. Metal-oxide semiconductor field-effect transistors (MOSFETs) can be used but multiple channels of MOSFET matrices are required to dissipate the conduction loss and reducing the power density of the SSPC. The use of extra parallel loops for bypassing the over-current can significantly reduce the number of continuously conducting parallel loops. The comparative study in terms of size, weight, power density of the bidirectional DC SSPCs with and without auxiliary bypass circuit is presented in this paper.

SPECIFICATION OF THE BIDIRECTIONAL DC SSPC FOR NEXTGEN CTR
Junction temperature of the MOSFETs
Junction temperature of the bypass IGBT during overcurrent situation
Thermal simulations of the SSPC with Bypass circuit
Findings
CONCLUSIONS
Full Text
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