Silicon-Based Nanoelectronic Semiconductor Material and Its Surface-Enhanced Raman Image Signals

Abstract

One-dimensional Zinc Oxide (ZnO) nanomaterials have important applications in devices, such as solar energy, sensors, and piezoelectric materials due to surface effects and quantum size effects. As a semiconductor material, Si has good thermal conductivity and low resistivity. A layer of n-type ZnO nanowires is grown on P-type monocrystalline silicon by transferring the Anodic Aluminum Oxide (AAO) template. The enhanced Raman effect on the surface is attempted by preparing n-type ZnO-P-type Si heterojunction nanostructures. This paper uses Si-based AAO as a template and uses electrochemical deposition method to prepare silicon-based nano-electronic semiconductor material ZnO/AAO/Si. According to SEM analysis, there are uniform pores on the surface of the material, and the cross-section shows that ZnO nanowires have been assembled into the AAO/Si structure. XRD analysis shows that ZnOn nanowires have a hexagonal wurtzite structure. In optoelectronic testing, through PL spectral analysis, the semiconductor material ZnO/AAO/Si has a strong yellow green emission peak near 574 nm. Field emission analysis shows that the β value of the ZnO field enhancement factor in the ZnO/AAO/Si structure is relatively high. The Surface-Enhanced Raman Spectroscopy (SERS) image signal experiment shows that the silicon-based nano-electronic semiconductor material prepared by electrochemical deposition method has good SERS characteristics. The SERS spectral intensity increases with the increase of the concentration of the detected substance and can be used as a SERS substrate to achieve Raman spectral image signal detection of chemical substances with low concentration.