Silicon-based high-integration reconfigurable dipole with SPiN

Abstract

To improve the integration of reconfigurable antenna systems, a novel high-integration solid state plasma reconfigurable dipole antenna based on surface PiN (SPiN) diodes was presented in this paper. Silicon-based SPiN diodes were the basic building blocks of plasma channel, and carrier concentration within the intrinsic region achieved a relatively high level (exceeding 1018 cm−3). In this paper, parameters of the plasma region have been extensively discussed, and several optimized band stop filters were also introduced to replace the conventional capacitor and inductor. This method greatly improved the integration of antenna system to meet the requirements of modern communications. The resonant frequencies at 2.43 GHz and 2.53 GHz have been achieved by turning on or off different sections of the dipole. The Voltage Standing Wave Ratio (VSWR) of the antenna was 1.03 and 1.34, respectively. Other parameters of this antenna were also investigated in this paper. Experimental results confirm the usefulness of the SPiN diodes within solid state plasma antenna and other semiconductor fields.