Abstract
Single-phase nanocrystalline diamond composite is very difficult to sinter because of a huge amount of oxygen-containing and nitrogen-containing functional groups adsorbed on the surface of nanocrystalline diamond going against the yielding of diamond-to-diamond bonding. In this paper, silicon film was deposited on nanocrystalline diamond by means of atomic layer deposition (ALD) using silane as precursor, which would promote the sintering of nanocrystalline diamond as the bond. The structure and the morphology of Si-deposited nanocrystalline diamond were thoroughly studied by X-ray diffraction (XRD), high-resolution electron microscopy (HREM) and Fourier transform infrared (FTIR) spectra. The results confirmed that silicon film grew uniformly on every primary particle and functional groups adsorbed on the surface of nanocrystalline diamond were removed by this method.
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