Abstract
This letter gives the first report of a direct correlation of Schottky barrier characteristics to silicide growth on a-Si:H. Changes in diode ideality factor (from 1.2 to 1.05) produced by annealing can now be directly attributed to growth of Pd2Si as demonstrated by Raman spectroscopy. Unannealed samples show long-term changes in characteristics at room temperature due to slow silicide growth. However, Pd Schottky barriers possess ideal stable characteristics once silicide growth is complete.
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