Abstract
ABSTRACTThe structures of CoSi2 formed from the bilayer of Co/(refractory metal) have been investigated. For a layer reversal and epitaxial growth of CoSi2 on Si substrate, the silicidation temperature of interposed refractory metal should be higher than that of Co and the oxidation potential of the refractory should also be negatively higher than that of Si to remove the native oxide on Si substrate. The main role of the refractory metal layer in the epitaxial growth of CoSi2 is to limit the Co diffusion to Si substrate, controlling the Co-Si reaction rate. Thus Co atoms are able to locate their stable positions with the lowest energy in CoSi2 lattice.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
