Abstract
Silica-supported germania adsorbents were prepared by treating silica with GeCl 4 vapor, and then causing the GeCl n surface layer to react with H 2O. Infrared spectroscopic techniques were used to monitor the reactions at various stages. The data suggest the following mechanism: GeCl 4 reacts on the silanols and also with siloxane bridges; the initial exposure to H 2O at 25°C then causes the hydrolysis of Si Cl groups to form Si OH groups as well as partial hydrolysis of the GeCl n layer. Degassing at high temperature then causes the partially hydrolyzed GeCl n layer to become mobile and rearrange and further react with the surface, eliminating the newly-formed silanols, and causing the formation of partially-chlorided germania patches. Dechlorination and aggregation of these proceeds as hydration-degassing cycles are continued. The adsorbents prepared in this fashion have properties like those of adsorbents prepared by reacting silica with Ge(OCH 3) 4 and converting the methoxide layer to oxide.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
