Abstract
CdSe quantum dots were in situ deposited on various structures of TiO2 photoanode by successive ionic layer adsorption and reaction (SILAR). Various sensitized TiO2 structures were integrated as a photoanode in order to make quantum dot sensitized solar cells. High power conversion efficiency was obtained; 2.89 % (Voc=524 mV, Jsc=9.78 mA/cm2, FF=0.56) for the cells that sensitized by SILAR method. Also all the cells, showed rather high efficiencies (more than 2.65%) regardless of their structure. Here we did the SILAR deposition in room temperature by a simple method which introduces it as a cost effective method for large scale production. Regarding the considerable efficiencies which obtained here by simple SILAR method for various structures, pointed out that SILAR deposition, can be introduced as an effective method for sensitizing electrodes by QDs, in quantum dot sensitized solar cells.
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